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	<updated>2026-04-30T01:43:41Z</updated>
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		<id>https://wiki.libresilicon.com/index.php?title=Chemical_recipes&amp;diff=394</id>
		<title>Chemical recipes</title>
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		<updated>2023-05-17T13:35:25Z</updated>

		<summary type="html">&lt;p&gt;185.128.9.126: /* Poly silicon */&lt;/p&gt;
&lt;hr /&gt;
&lt;div&gt;==Poly silicon==&lt;br /&gt;
Commonly Silane gas is being used in the industry for forming polysilicon.&lt;br /&gt;
Unfortunately this gas is highly poisonous and as such unfeasible for small laboratory scale setups.&lt;br /&gt;
This is why we&#039;re collecting alternative recipes here.&lt;br /&gt;
&lt;br /&gt;
Currently we&#039;ve got the polysilicon [[R&amp;amp;D challenge#Polysilicon]] going, for finding alternative recipes to form polysilicon without the need for the highly poisonous silane gas.&lt;br /&gt;
&lt;br /&gt;
===Unverified less poisonous CVD method===&lt;br /&gt;
&lt;br /&gt;
==Doping==&lt;br /&gt;
Alternatives to Boron and Phosphorus gas go here.&lt;br /&gt;
&lt;br /&gt;
==Hafnium oxide==&lt;br /&gt;
&lt;br /&gt;
There are two ways known so far, which allow for Hafnium oxide deposition, one is using a common CVD the other one is using metalorganic chemical vapour deposition (MOCVD)&lt;br /&gt;
&lt;br /&gt;
For simplicity and cost reasons I&#039;ve focused more on the CVD solution so far, because its chemicals required are easier to obtain and the process can be performed with a normal CVD furnace.&lt;br /&gt;
&lt;br /&gt;
===CVD method===&lt;br /&gt;
The chemical recipe and the process for the deposition and cleaning are based on the following publication https://aip.scitation.org/doi/10.1063/1.1495847 and this patent https://patents.google.com/patent/CN100356519C/en&lt;br /&gt;
&lt;br /&gt;
The process is enough complex as to justify its own page, which can be found here [[Hafnium oxide deposition (CVD)]]&lt;br /&gt;
&lt;br /&gt;
===MOCVD method===&lt;br /&gt;
&lt;br /&gt;
The chemical recipe and the process for the deposition and cleaning are based on the following publication https://patents.google.com/patent/KR100592793B1/en and this patent  https://patents.google.com/patent/US7192623B2&lt;br /&gt;
&lt;br /&gt;
The process is enough complex as to justify its own page, which can be found here [[Hafnium oxide deposition (MOCVD)]]&lt;/div&gt;</summary>
		<author><name>185.128.9.126</name></author>
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