View source for Hf precursor TDEAH (Hf(NEt2)4)

The base of this chemical recipe and processing is Hafnium-Tetrachloride, as it can be seen in the picture.

[[File:High-Quality-Hafnium-Chloride-Hafnium-Tetrachloride-Hfcl4-CAS-No-13499-05-3-with-Best-Price.jpg|200px|Hafnium-Tetrachloride]]

This is the structure of the organic precursor for Hafnium oxide deposition in a CVD ([[Hafnium_oxide_deposition_(CVD)]])

[[File:TDEAH.png|200px]]

as described in the following [https://download.libresilicon.com/papers/HafniumOxide.pdf Japanese paper]

<span style="color:red">
<b>WARNING!</b>
This chemical reacts VIOLENTLY with water and humidity in general!
Caution is required when dealing with it!
</span>

==Atmospheric requirements==
Since this mixture and its components react with oxygen and humidity, we need to use a Schlenk tube setup for mixing it, because we can only do it in an inert atmosphere.

==Chemical reaction==

With a temperature of 117°C and a pressure of 0.04 torr the following reaction will occur within an inert atmosphere (Argon/Nitrogen):

HfCl<sub>4</sub> + Et<sub>2</sub>NLi
→
TDEAH (Hf(NEt<sub>2</sub>)<sub>4</sub>)

The yield typically is around 60%

The waste products will be some carbon hydrates (not the stuff in white bread)