Eco friendly Polysilicon deposition (CVD) - Revision history

PhilippGuehring: Adding link back

2023-05-17T15:31:02Z

Adding link back

← Older revision		Revision as of 15:31, 17 May 2023
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	So we asked Bing AI to crawl the web for alternative solutions, and after some digging she found two research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.		So we asked Bing AI to crawl the web for alternative solutions for the Polysilicon deposition [[R&D challenge]] , and after some digging she found two research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.

	The recipe goes as follows:		The recipe goes as follows:

Leviathan at 14:55, 17 May 2023

2023-05-17T14:55:27Z

← Older revision		Revision as of 14:55, 17 May 2023
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	So we asked Bing AI to crawl the web for alternative solutions, and after some digging she found to research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.		So we asked Bing AI to crawl the web for alternative solutions, and after some digging she found two research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.

	The recipe goes as follows:		The recipe goes as follows:

Leviathan at 14:53, 17 May 2023

2023-05-17T14:53:57Z

← Older revision		Revision as of 14:53, 17 May 2023
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	So we asked Bing AI to crawl the web for alternative solutions <ref>https://www.sciencedirect.com/science/article/pii/~~S0927775703005582~~</ref> <ref>https://www.sciencedirect.com/science/article/pii/~~0040609085902536~~</ref>		So we asked Bing AI to crawl the web for alternative solutions, and after some digging she found to research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.

			The recipe goes as follows:

	# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere		# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere

Leviathan at 14:48, 17 May 2023

2023-05-17T14:48:12Z

← Older revision		Revision as of 14:48, 17 May 2023
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	~~1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C~~ for ~~30 minutes in an oxygen atmosphere~~<ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>		So we asked Bing AI to crawl the web for alternative solutions <ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref> <ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref>

	2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol~~(https://www.sciencedirect.com/science/article/pii/S0927775703005582)~~.The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness~~(https://www.sciencedirect.com/science/article/pii/S0927775703005582)~~.		# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
			# Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
	3. Load the silicon substrate into the CVD chamber and heat it to 200°C~~(https://www.sciencedirect.com/science/article/pii/S0927775703005582)~~.		# Load the silicon substrate into the CVD chamber and heat it to 200°C.
			# Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
	4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer~~(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536)~~.		# Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
			# Stop the deposition and purge the CVD chamber with nitrogen gas.
	5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate~~(https://www~~.~~sciencedirect.com/science/article/pii/S0927775703005582).~~		# Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.

	6. Stop the deposition and purge the CVD chamber with nitrogen gas~~(https://www.sciencedirect~~.~~com/science/article/pii/S0927775703005582).~~

	7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air~~(https://www.sciencedirect.com/science/article/pii/S0927775703005582)~~.

Leviathan at 14:15, 17 May 2023

2023-05-17T14:15:00Z

← Older revision		Revision as of 14:15, 17 May 2023
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	1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere~~(https://www.sciencedirect.com/science/article/pii/S0927775703005582).~~		1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere<ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>

	<ref>~~{{cite web \|url=~~https://www.sciencedirect.com/science/article/pii/S0927775703005582}}</ref>

	2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

Leviathan at 13:46, 17 May 2023

2023-05-17T13:46:43Z

← Older revision		Revision as of 13:46, 17 May 2023
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	1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

			<ref>{{cite web \|url=https://www.sciencedirect.com/science/article/pii/S0927775703005582}}</ref>

	2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

Leviathan at 13:44, 17 May 2023

2023-05-17T13:44:11Z

← Older revision		Revision as of 13:44, 17 May 2023
Line 1:		Line 1:
	1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

	2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

	3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

	4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).		4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).

	5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

	6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

	7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).		7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

Leviathan: Created page with "1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sc..."

2023-05-17T13:43:47Z

Created page with "1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sc..."

New page

1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).
5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).