Hafnium oxide deposition (CVD) - Revision history

Leviathan: /* Equipment */

2022-10-14T17:33:21Z

Equipment

← Older revision		Revision as of 17:33, 14 October 2022
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	** https://www.digiqualsystems.com/products/furnaces/tubular-furnace/horizontal-tubular-furnace/		** https://www.digiqualsystems.com/products/furnaces/tubular-furnace/horizontal-tubular-furnace/
	** https://www.mtixtl.com/ThreeZonesTubeFurnaceHighVacuumMFCGas-OTF-1200X-III-HVC-UL.aspx		** https://www.mtixtl.com/ThreeZonesTubeFurnaceHighVacuumMFCGas-OTF-1200X-III-HVC-UL.aspx

			* Bubblers:
			** https://www.mtixtl.com/Bubbler/Evaporatorforliquidsourcesandchemicalprecursors-BL-SS.aspx

			* Mass flow meters
			** https://www.mtixtl.com/Liquid-delivery-system.aspx

2022-10-14T17:31:36Z

Equipment

← Older revision		Revision as of 17:31, 14 October 2022
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	===Equipment===		===Equipment===
	https://www.digiqualsystems.com/products/furnaces/tubular-furnace/horizontal-tubular-furnace/
			* Potential CVD furnaces:
			** https://www.digiqualsystems.com/products/furnaces/tubular-furnace/horizontal-tubular-furnace/
			** https://www.mtixtl.com/ThreeZonesTubeFurnaceHighVacuumMFCGas-OTF-1200X-III-HVC-UL.aspx

2022-10-14T17:21:16Z

← Older revision		Revision as of 17:21, 14 October 2022
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	===CVD chamber pressure===		===CVD chamber pressure===
	Set the pressure within the CVD chamber to 1 torr		Set the pressure within the CVD chamber to 1 torr

			===Equipment===
			https://www.digiqualsystems.com/products/furnaces/tubular-furnace/horizontal-tubular-furnace/

2022-10-13T22:05:49Z

← Older revision		Revision as of 22:05, 13 October 2022
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	The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition		The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition

	Since HfCl<sub>4</sub> is a solid salt at room temperature, we need to first create a liquid precursor~~, and use [https://www.intechopen.com/chapters/63679 direct liquid injection] for using it in our CVD~~.		Since HfCl<sub>4</sub> is a solid salt at room temperature, we need to first create a liquid precursor which can be turned into a vapor.

	The process is based on a [https://download.libresilicon.com/papers/HafniumOxide.pdf Japanese paper] and requires a complex precursor.		The process is based on a [https://download.libresilicon.com/papers/HafniumOxide.pdf Japanese paper] and requires a complex precursor.

2022-10-13T19:41:18Z

Substrate temperature

← Older revision		Revision as of 19:41, 13 October 2022
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	The flow rate can be varied between 0 and 20 sccm, for obvious reasons you want it higher than zero, because without oxygen you won't get any oxide.		The flow rate can be varied between 0 and 20 sccm, for obvious reasons you want it higher than zero, because without oxygen you won't get any oxide.

	===Substrate temperature===		===Substrate/CVD chamber temperature===
	Set a temperature between 300°C and 450°C, in order to control deposition speed.		Set a temperature between 300°C and 450°C, in order to control deposition speed.

	===CVD chamber pressure===		===CVD chamber pressure===
	Set the pressure within the CVD chamber to 1 torr		Set the pressure within the CVD chamber to 1 torr

2022-10-13T19:40:55Z

Precursor injection

← Older revision		Revision as of 19:40, 13 October 2022
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	To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.		To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.

			Heat the bubbling system chamber to 80°C.

			The flow rate into the CVD chamber should be 40 sccm.

	===Oxidizer injection===		===Oxidizer injection===

2022-10-13T19:39:41Z

Oxidizer injection

← Older revision		Revision as of 19:39, 13 October 2022
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	Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99 and feed it into the chamber through a separate nozzle, because otherwise the O<sub>2</sub> decomposes the TDEAH before it can reach the substrate.		Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99 and feed it into the chamber through a separate nozzle, because otherwise the O<sub>2</sub> decomposes the TDEAH before it can reach the substrate.

			The flow rate can be varied between 0 and 20 sccm, for obvious reasons you want it higher than zero, because without oxygen you won't get any oxide.

	===Substrate temperature===		===Substrate temperature===

2022-10-13T19:38:32Z

← Older revision		Revision as of 19:38, 13 October 2022
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	Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99 and feed it into the chamber through a separate nozzle, because otherwise the O<sub>2</sub> decomposes the TDEAH before it can reach the substrate.		Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99 and feed it into the chamber through a separate nozzle, because otherwise the O<sub>2</sub> decomposes the TDEAH before it can reach the substrate.

			===Substrate temperature===
			Set a temperature between 300°C and 450°C, in order to control deposition speed.

			===CVD chamber pressure===
			Set the pressure within the CVD chamber to 1 torr

2022-10-13T19:35:25Z

Oxidizer injection

← Older revision		Revision as of 19:35, 13 October 2022
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	[[File:HFO2_CVD_setup.png\|200px\|right\|thumb\|CVD setup]]		[[File:HFO2_CVD_setup.png\|200px\|right\|thumb\|CVD setup]]

	Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99		Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99 and feed it into the chamber through a separate nozzle, because otherwise the O<sub>2</sub> decomposes the TDEAH before it can reach the substrate.

2022-10-13T19:34:15Z

← Older revision		Revision as of 19:34, 13 October 2022
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	To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.		To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.

	===~~Step 2~~===		===Oxidizer injection===

	[[File:HFO2_CVD_setup.png\|200px\|right\|thumb\|CVD setup]]		[[File:HFO2_CVD_setup.png\|200px\|right\|thumb\|CVD setup]]

			Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99