Hafnium oxide deposition (CVD): Difference between revisions
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[[File:HFO2_CVD_setup.png|200px]] [[File:Pressure_TDEAH.png|200px]] | [[File:HFO2_CVD_setup.png|200px|right|thumb|CVD setup]] [[File:Pressure_TDEAH.png|200px]] | ||
Revision as of 19:20, 13 October 2022
The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition
Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.
The process is based on a Japanese paper and requires a complex precursor.
The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.
Step 1
Synthesize the precursor Hf precursor TDEAH (Hf(NEt2)4) accordingly... Or buy it somewhere
Step 2
