Eco friendly Polysilicon deposition (CVD): Difference between revisions

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1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
So we asked Bing AI to crawl the web for alternative solutions for the Polysilicon deposition [[R&D challenge]] , and after some digging she found two research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.
2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
 
3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
The recipe goes as follows:
4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).
 
5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
# Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
# Load the silicon substrate into the CVD chamber and heat it to 200°C.
# Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
# Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
# Stop the deposition and purge the CVD chamber with nitrogen gas.
# Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.

Latest revision as of 15:31, 17 May 2023

So we asked Bing AI to crawl the web for alternative solutions for the Polysilicon deposition R&D challenge , and after some digging she found two research papers[1][2], from which she deduced a recipe using Siliclad®[3], which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.

The recipe goes as follows:

  1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
  2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
  3. Load the silicon substrate into the CVD chamber and heat it to 200°C.
  4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
  5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
  6. Stop the deposition and purge the CVD chamber with nitrogen gas.
  7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.
  1. ↑ https://www.sciencedirect.com/science/article/pii/0040609085902536
  2. ↑ https://www.sciencedirect.com/science/article/pii/S0927775703005582
  3. ↑ https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf
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