Eco friendly Polysilicon deposition (CVD): Difference between revisions
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So we asked Bing AI to crawl the web for alternative solutions <ref>https://www.sciencedirect.com/science/article/pii/ | So we asked Bing AI to crawl the web for alternative solutions for the Polysilicon deposition [[R&D challenge]] , and after some digging she found two research papers<ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref><ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>, from which she deduced a recipe using Siliclad®<ref>https://s3.amazonaws.com/gelest/sds/SIS6952.0_GHS%20EU_English.pdf</ref>, which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe. | ||
The recipe goes as follows: | |||
# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere | # Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere | ||
Latest revision as of 15:31, 17 May 2023
So we asked Bing AI to crawl the web for alternative solutions for the Polysilicon deposition R&D challenge , and after some digging she found two research papers[1][2], from which she deduced a recipe using Siliclad®[3], which is a liquid alternative to the very dangerous and poisonous Silane gas, however, we're still looking for a lab for verifying this recipe.
The recipe goes as follows:
- Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
- Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
- Load the silicon substrate into the CVD chamber and heat it to 200°C.
- Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
- Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
- Stop the deposition and purge the CVD chamber with nitrogen gas.
- Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.