Fingered Transistors: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
| (One intermediate revision by the same user not shown) | |||
| Line 5: | Line 5: | ||
Each finger shares a common gate but has separate source and drain regions. | Each finger shares a common gate but has separate source and drain regions. | ||
The Bulk/Substrate contact is a ring, also known as a guard ring. The reason making the bulk contact surround the transistor, has been nicely elaborated by Gemini<ref>[[Analysis: Single Bulk Contact vs. Bulk Contact Ring for a FET]]</ref>. | The Bulk/Substrate contact is a ring, also known as a guard ring. The reason making the bulk contact surround the transistor, has been nicely elaborated by Gemini<ref>[[Analysis: Single Bulk Contact vs. Bulk Contact Ring for a FET]]</ref><ref>[[Expert Assessment on Bulk Contact Geometry for Multi-Fingered MOSFET P-Cells in LibrePDK]]</ref>. | ||
[[File:Layout-of-multi-finger-RF-transistors-with-variable-L-f-5-011-018-025-045-1-2.png|none|frame|Fingered transistor layout example]] | [[File:Layout-of-multi-finger-RF-transistors-with-variable-L-f-5-011-018-025-045-1-2.png|none|frame|Fingered transistor layout example]] | ||
Latest revision as of 16:05, 12 October 2025
Fingers involve splitting a single large transistor into multiple smaller transistors (or “fingers”) and connecting them in parallel.
Instead of having one large transistor, the width is divided into several parts.
Each finger shares a common gate but has separate source and drain regions.
The Bulk/Substrate contact is a ring, also known as a guard ring. The reason making the bulk contact surround the transistor, has been nicely elaborated by Gemini[1][2].
