Hafnium oxide deposition (CVD): Difference between revisions
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[[File:HFO2_CVD_setup.png|200px]] | [[File:HFO2_CVD_setup.png|200px]] | ||
[[File:Pressure_TDEAH.png|200px]] | |||
===Processing steps=== | ===Processing steps=== | ||
Revision as of 14:25, 12 October 2022
The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition
Processing steps
Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.
The process is based on a Japanese paper and requires a complex precursor.
The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.
Links
Study HfO2 formation: https://iopscience.iop.org/article/10.1149/MA2005-02/13/547/pdf
A Japanese paper how they grew it with an LPCVD: http://www.trichemical.com/topics/Manuscript%20revisions.pdf