Chemical recipes: Difference between revisions
Line 7: | Line 7: | ||
===Unverified less poisonous CVD method=== | ===Unverified less poisonous CVD method=== | ||
We asked Bing for a solution with less poisonous chemicals, and she came up with the following recipe [[Eco friendly Polysilicon deposition (CVD)]], however we yet have to verify it in a lab. | |||
==Doping== | ==Doping== |
Latest revision as of 13:40, 17 May 2023
Poly silicon
Commonly Silane gas is being used in the industry for forming polysilicon. Unfortunately this gas is highly poisonous and as such unfeasible for small laboratory scale setups. This is why we're collecting alternative recipes here.
Currently we've got the polysilicon R&D challenge#Polysilicon going, for finding alternative recipes to form polysilicon without the need for the highly poisonous silane gas.
Unverified less poisonous CVD method
We asked Bing for a solution with less poisonous chemicals, and she came up with the following recipe Eco friendly Polysilicon deposition (CVD), however we yet have to verify it in a lab.
Doping
Alternatives to Boron and Phosphorus gas go here.
Hafnium oxide
There are two ways known so far, which allow for Hafnium oxide deposition, one is using a common CVD the other one is using metalorganic chemical vapour deposition (MOCVD)
For simplicity and cost reasons I've focused more on the CVD solution so far, because its chemicals required are easier to obtain and the process can be performed with a normal CVD furnace.
CVD method
The chemical recipe and the process for the deposition and cleaning are based on the following publication https://aip.scitation.org/doi/10.1063/1.1495847 and this patent https://patents.google.com/patent/CN100356519C/en
The process is enough complex as to justify its own page, which can be found here Hafnium oxide deposition (CVD)
MOCVD method
The chemical recipe and the process for the deposition and cleaning are based on the following publication https://patents.google.com/patent/KR100592793B1/en and this patent https://patents.google.com/patent/US7192623B2
The process is enough complex as to justify its own page, which can be found here Hafnium oxide deposition (MOCVD)