Hafnium oxide deposition (CVD): Difference between revisions
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The synthesis of the [[Hf precursor TDEAH (Hf(NEt2)4)]] is so complex, that it needs its own page. | The synthesis of the [[Hf precursor TDEAH (Hf(NEt2)4)]] is so complex, that it needs its own page. | ||
=== | ===Precursor injection=== | ||
Introduce TDEAH gas into the deposition chamber using a bubbling system, use N<sub>2</sub> as the carrier gas. | |||
To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C. | |||
===Step 2=== | ===Step 2=== | ||
[[File:HFO2_CVD_setup.png|200px|right|thumb|CVD setup]] | [[File:HFO2_CVD_setup.png|200px|right|thumb|CVD setup]] | ||
[[File:Pressure_TDEAH.png|200px|right|thumb|Vapor pressure]] | [[File:Pressure_TDEAH.png|200px|right|thumb|Vapor pressure]] | ||
Revision as of 19:23, 13 October 2022
The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition
Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.
The process is based on a Japanese paper and requires a complex precursor.
The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.
Precursor injection
Introduce TDEAH gas into the deposition chamber using a bubbling system, use N2 as the carrier gas. To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.
