Eco friendly Polysilicon deposition (CVD): Difference between revisions
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1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | 1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | ||
2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | 2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | ||
3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | 3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | ||
4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536). | 4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536). | ||
5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | 5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | ||
6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | 6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | ||
7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | 7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582). | ||
Revision as of 13:44, 17 May 2023
1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).
5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).