Eco friendly Polysilicon deposition (CVD)

1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere

2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).

5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).