Eco friendly Polysilicon deposition (CVD): Difference between revisions
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So we asked Bing AI to crawl the web for alternative solutions <ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref> <ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref> | |||
# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere | |||
# Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness. | |||
# Load the silicon substrate into the CVD chamber and heat it to 200°C. | |||
# Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer. | |||
# Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate. | |||
# Stop the deposition and purge the CVD chamber with nitrogen gas. | |||
# Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air. | |||
Revision as of 14:48, 17 May 2023
So we asked Bing AI to crawl the web for alternative solutions [1] [2]
- Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
- Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
- Load the silicon substrate into the CVD chamber and heat it to 200°C.
- Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
- Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
- Stop the deposition and purge the CVD chamber with nitrogen gas.
- Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.