Hf precursor TDEAH (Hf(NEt2)4)

The base of this chemical recipe and processing is Hafnium-Tetrachloride, as it can be seen in the picture.

This is the structure of the organic precursor for Hafnium oxide deposition in a CVD (Hafnium_oxide_deposition_(CVD))

as described in the following Japanese paper

WARNING! This chemical reacts VIOLENTLY with water and humidity in general! Caution is required when dealing with it!

Atmospheric requirements

Since this mixture and its components react with oxygen and humidity, we need to use a Schlenk tube setup for mixing it, because we can only do it in an inert atmosphere.

Chemical reaction

With a temperature of 117°C and a pressure of 0.04 torr the following reaction will occur within an inert atmosphere (Argon/Nitrogen):

HfCl₄ + Et₂NLi → TDEAH (Hf(NEt₂)₄)

The yield typically is around 60%

The waste products will be some carbon hydrates (not the stuff in white bread)