Eco friendly Polysilicon deposition (CVD): Difference between revisions

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1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere<ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref>
So we asked Bing AI to crawl the web for alternative solutions <ref>https://www.sciencedirect.com/science/article/pii/S0927775703005582</ref> <ref>https://www.sciencedirect.com/science/article/pii/0040609085902536</ref>


2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol(https://www.sciencedirect.com/science/article/pii/S0927775703005582).The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
# Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
 
# Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
3. Load the silicon substrate into the CVD chamber and heat it to 200°C(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
# Load the silicon substrate into the CVD chamber and heat it to 200°C.
 
# Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer(https://www.sciencedirect.com/science/article/pii/S0927775703005582)(https://www.sciencedirect.com/science/article/pii/0040609085902536).
# Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
 
# Stop the deposition and purge the CVD chamber with nitrogen gas.
5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
# Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.
 
6. Stop the deposition and purge the CVD chamber with nitrogen gas(https://www.sciencedirect.com/science/article/pii/S0927775703005582).
 
7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air(https://www.sciencedirect.com/science/article/pii/S0927775703005582).

Revision as of 14:48, 17 May 2023

So we asked Bing AI to crawl the web for alternative solutions [1] [2]

  1. Prepare a silicon substrate by cleaning it with acetone and isopropanol, and then oxidizing it in a furnace at 1000°C for 30 minutes in an oxygen atmosphere
  2. Prepare a chemical system containing a water dispersible octadecylsilane-based chemical (such as Siliclad®) and a cationic surfactant (such as cetyltrimethylammonium bromide) in a solvent system containing a mixture of tertiary alcohols and diacetone alcohol. The concentration of the silane and the surfactant should be optimized according to the desired hydrophobicity and film thickness.
  3. Load the silicon substrate into the CVD chamber and heat it to 200°C.
  4. Introduce the chemical system into the CVD chamber as a vapor by using a bubbler or an ultrasonic nebulizer.
  5. Maintain the deposition for 10 minutes or until a uniform coating is formed on the substrate.
  6. Stop the deposition and purge the CVD chamber with nitrogen gas.
  7. Remove the substrate from the CVD chamber and cure it at 150°C for 30 minutes in air.
  1. ↑ https://www.sciencedirect.com/science/article/pii/S0927775703005582
  2. ↑ https://www.sciencedirect.com/science/article/pii/0040609085902536
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