Hafnium oxide deposition (CVD): Difference between revisions

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To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.
To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.


===Step 2===
===Oxidizer injection===
 
[[File:HFO2_CVD_setup.png|200px|right|thumb|CVD setup]]
[[File:HFO2_CVD_setup.png|200px|right|thumb|CVD setup]]
Have O<sub>2</sub> in N<sub>2</sub> in a ration 1:99

Revision as of 19:34, 13 October 2022

The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition

Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.

The process is based on a Japanese paper and requires a complex precursor.

The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.

Precursor injection

Vapor pressure

Introduce TDEAH gas into the deposition chamber using a bubbling system, use N2 as the carrier gas.

To prevent liquefaction of the source before it enters the deposition chamber, maintain the line from the bubbler to the chamber at a temperature of 85°C.

Oxidizer injection

CVD setup

Have O2 in N2 in a ration 1:99