Hafnium oxide deposition (CVD): Difference between revisions
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The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition | The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition | ||
===Processing steps=== | ===Processing steps=== | ||
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The process is based on a [https://download.libresilicon.com/papers/HafniumOxide.pdf Japanese paper] and requires a complex precursor. | The process is based on a [https://download.libresilicon.com/papers/HafniumOxide.pdf Japanese paper] and requires a complex precursor. | ||
The synthesis of | The synthesis of the [[Hf precursor TDEAH (Hf(NEt2)4)]] is so complex, that it needs its own page. | ||
===Links=== | ===Links=== | ||
Revision as of 14:23, 12 October 2022
The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition
Processing steps
Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.
The process is based on a Japanese paper and requires a complex precursor.
The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.
Links
Study HfO2 formation: https://iopscience.iop.org/article/10.1149/MA2005-02/13/547/pdf
A Japanese paper how they grew it with an LPCVD: http://www.trichemical.com/topics/Manuscript%20revisions.pdf