Hafnium oxide deposition (CVD): Difference between revisions

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===Step 2===
===Step 2===
[[File:HFO2_CVD_setup.png|200px]] [[File:Pressure_TDEAH.png|200px]]
[[File:HFO2_CVD_setup.png|200px|right|thumb|CVD setup]] [[File:Pressure_TDEAH.png|200px]]

Revision as of 19:20, 13 October 2022

The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition

Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.

The process is based on a Japanese paper and requires a complex precursor.

The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.

Step 1

Synthesize the precursor Hf precursor TDEAH (Hf(NEt2)4) accordingly... Or buy it somewhere

Step 2

CVD setup

Pressure TDEAH.png