Hafnium oxide deposition (CVD)

From LibreSilicon
Revision as of 15:43, 13 October 2022 by Leviathan (talk | contribs) (→‎Step 1)
Jump to navigation Jump to search

The equipment required for this process are a CVD and a plasma cleaner for removing impurities after the Hafnium oxide deposition

Since HfCl4 is a solid salt at room temperature, we need to first create a liquid precursor, and use direct liquid injection for using it in our CVD.

The process is based on a Japanese paper and requires a complex precursor.

The synthesis of the Hf precursor TDEAH (Hf(NEt2)4) is so complex, that it needs its own page.

Step 1

Synthesize the precursor Hf precursor TDEAH (Hf(NEt2)4) accordingly... Or buy it

Step 2

HFO2 CVD setup.png

Pressure TDEAH.png