Basic Tooling: Difference between revisions
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=== Rapid Thermal Processing (RTP) === | === Rapid Thermal Processing (RTP) === | ||
This is used for instance for initiating metallurgical reactions between a deposited titanium thin film and the silicon substrate in order to achieve titanium silicide which reduces the resistance of the polisilicon as I do in [[LibreSilicon 1µm CMOS Process Flow (HKUST NFF)| | This is used for instance for initiating metallurgical reactions between a deposited titanium thin film and the silicon substrate in order to achieve titanium silicide which reduces the resistance of the polisilicon as I do in step 13 of [[LibreSilicon 1µm CMOS Process Flow (HKUST NFF)|LS1U]] ([[LibreSilicon 1µm CMOS Process Flow (HKUST NFF)#Step 13: Silicidation]]) | ||
=== Tube Furnace (and CVD) === | === Tube Furnace (and CVD) === | ||
Latest revision as of 09:34, 30 May 2026
In order to not have to rely on foundries anymore and to truly democratize semiconductor manufacturing equipment, and eliminating the risk of supply chain attacks by eliminating the supply chain all together, a minimum viable lab setup is needed for making semiconductor structures in your shed.
In order to manufacture transistors, you need the capability of performing the below basic physical operations on your sample
Lower Particle Count in the Air
Heat Treatment
Heat treatment is critical for several steps like dopant diffusion, in order to control the depth of wells, as well as for depositing materials in a CVD process, like polysilicon and low temperature oxide (LTO) or for forming silicide/salicide thin films reducing the sheet resistance of polysilicon and junctions.
Rapid Thermal Processing (RTP)
This is used for instance for initiating metallurgical reactions between a deposited titanium thin film and the silicon substrate in order to achieve titanium silicide which reduces the resistance of the polisilicon as I do in step 13 of LS1U (LibreSilicon 1µm CMOS Process Flow (HKUST NFF)#Step 13: Silicidation)